conference – William G. Vandenberghe

SEPTEMBER 2021

Our article “Ballistic quantum transport study of Al contacting silicane using empirical pseudopotentials” was accepted at 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

SEPTEMBER 2021

Our article “Ab initio modeling of few-layer dilute magnetic semiconductors” was accepted at 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

I’m an Associate Professor at UT Dallas since 2021.

I have a diverse research group composed of experts unraveling electron transport at the nanoscale using theoretical and computational methods.
Starting from the laws of quantum mechanics, we explain how modern electronics work and how to design electronic devices of the future. We use commercially available codes and develop open-source software to study novel materials and devices. Materials of interest are conventional semiconductors, two-dimensional materials, topological insulators, layered magnets, and novel dielectrics. Device structures under investigation are transistors and solar cells.
Collaborating with industrial partners, our work impacts nanoelectronics, power electronics, and photovoltaics.