William G. Vandenberghe

AUGUST 2020

Our article “Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-classical and Quantum Analysis” was published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

I’m an Associate Professor at UT Dallas since 2021.

I have a diverse research group composed of experts unraveling electron transport at the nanoscale using theoretical and computational methods.
Starting from the laws of quantum mechanics, we explain how modern electronics work and how to design electronic devices of the future. We use commercially available codes and develop open-source software to study novel materials and devices. Materials of interest are conventional semiconductors, two-dimensional materials, topological insulators, layered magnets, and novel dielectrics. Device structures under investigation are transistors and solar cells.
Collaborating with industrial partners, our work impacts nanoelectronics, power electronics, and photovoltaics.